The development of Individually Addressable 960×540 GaN-based Micro-Light Emitting Diode Array
碩士 === 國立清華大學 === 電子工程研究所 === 104 === In this thesis, the major goal is to develop an individually addressable 960×540 Gallium Nitride (GaN) based micro-light emitting diode array in assistant of mature LED processing technique: On top of patterned sapphire grows a thin GaN epitaxy layer, and using...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wwq48p |