The Fabrication of Vertical Trench Gate GaN MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 104 === In this thesis, we fabricated vertical trench gate GaN MOSFETs on MBE grown epitaxial layers on GaN substrates, and investigated the effects on device characteristics from different ALD gate insulators and RTA process for ohmic contacts. The samples of this expe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rasne6 |