Growth of Topological Insulator Thin Films on 2D Materials of Graphene and MoS2
碩士 === 國立清華大學 === 物理系 === 104 === In this work, the growth of topological insulators Bi2Se3 and Bi2Te3 thin films on 2D materials of graphene/SiC, MoS2/Al2O3 was studied in details. The advantage of using 2D materials as substrates is that they do not have dangling bonds on the surface. This provide...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/97072507894632055625 |