$Probing Interfacial Strains in Si/Si0.8Ge0.2/Si Using Three-Beam Bragg-Surface Diffraction$

Probing Interfacial Strains in Si/Si0.8Ge0.2/Si Using Three-Beam Bragg-Surface Diffraction

碩士 === 國立清華大學 === 物理系 === 104 === The semiconductor devices are composed of thin-film systems, therefore, the strain is one of the important factors to the performance of the device. We probe interfacial strains in Si/Si0.8Ge0.2/Si using three-beam Bragg-surface diffraction. The experiment was perfo...

Full description

Bibliographic Details
Main Authors:	Yu, Lien Kuang, 于璉光
Other Authors:	Chang,Shih Lin
Format:	Others
Language:	zh-TW
Published:	2016
Online Access:	http://ndltd.ncl.edu.tw/handle/67929895804984717607

Similar Items

Investigation of Interfacial Strains in Si0.8Ge0.2/Si Using Three-Beam Bragg-Surface Diffraction
by: Wei, Yong Cheng, et al.
Published: (2016)

Study of Probing Interfacial Strains in SiGe/Si Using Three-Beam Bragg-Surface Diffraction
by: Wu, Ting-Wei, et al.
Published: (2015)

Depth profiles with sub-picometer resolution of the interfacial strains of Si0.7Ge0.3/Si using three-beam Bragg-surface diffraction
by: Zheng, Yan Zong, et al.
Published: (2016)

Investigation of Interfacial Strain Field in SiGe/Si Systems Using Bragg-Surface X-ray Diffraction
by: Zheng, Yan-Zong, et al.
Published: (2009)

Self-Assembled Ag Particles on Si0.8Ge0.2 and Growth of ZnO Nanowires
by: Hsu-Feng Chiu, et al.
Published: (2004)

Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity
by: Hosseini, S. Aria, et al.
Published: (2021)

Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity
by: Hosseini, S. Aria, et al.
Published: (2022)

Study of Interfacial Reactions of Mo/Si0.76Ge0.24
by: Hsin-wei Huang, et al.
Published: (1999)

Investigating Interface Strains for thin-film SiGe on Si Substrate Using three-beam Bragg Surface Diffraction
by: Liang, Hsuan, et al.
Published: (2013)

Superconducting single X-ray photon detector based on W0.8Si0.2
by: Xiaofu Zhang, et al.
Published: (2016-11-01)

Characteristic of 10 periods SLS LED with Si0.8Ge0.2 capping layer for 1.3 ~1.5 um wavelength
by: Hou-Ru Li, et al.
Published: (2005)

Investigation on Ge<sub>0.8</sub>Si<sub>0.2</sub>-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice
by: Lu Xie, et al.
Published: (2021-05-01)

Study of Interfacial Reactions of Co/Si0.76Ge0.24/Si(100) by Pulsed KrF laser and Vacuum Annealing
by: Han, Yu-Lin, et al.
Published: (1998)

Study of Interfacial Reactions of Pd/Si0.76Ge0.24/Si(100) by Pulsed KrF Laser and Vacuum Annealinng
by: Chen, Da-Zen, et al.
Published: (1998)

Strained Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium
by: Lu Xie, et al.
Published: (2020-08-01)

Formation of Ni Germano-Silicide on Single Crystalline Si0.3Ge0.7/Si
by: Wu Kuan Long, et al.
Published: (2002)

A high-entropy silicide: (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2
by: Joshua Gild, et al.
Published: (2019-09-01)

Spin and valence states of iron in (Mg[subscript 0.8]Fe[subscript 0.2])SiO[subscript 3] perovskite
by: Grocholski, Brent, et al.
Published: (2011)

Ohmic Contacts and Interfacial Reactions of Hf/p-Si0.85Ge0.15 and Hf/n-GaN
by: Ming-Shaw Chung, et al.
Published: (2001)

The Microstructures and Properties of Al-11%Si-0.2~0.3%Mg Alloys and SiC particulates Reinforced Al-11%Si-0.3%Mg Composites
by: Chiou, Chwei-Horng, et al.
Published: (1996)

Activation and Reactions of Si-Si and Si-Ge σ-Bonds by Bis(t-alkyl isocyanide)palladium(0) Complexes
by: Oike, Hideaki
Published: (2009)

Magnetoresistance of proton irradiated Si0.97Ge0.03 whiskers
by: Nadezhda T. Pavlovskaya, et al.
Published: (2016-09-01)

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
by: Hung-Pin Hsu, et al.
Published: (2013-01-01)

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode
by: Ahmed A. M. El-Amir, et al.
Published: (2018-11-01)

Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
by: Byoung-Seok Lee, et al.
Published: (2021-04-01)

THERMAL EXPANSION BEHAVIOR OF THE Ba0.2Sr0.8Co0.8Fe0.2O3−δ (BSCF) WITH Sm0.2Ce0.8O1.9
by: M. AHMADREZAEI, et al.
Published: (2014-03-01)

The magnetic study of rare-earth compounds CeRu2(Si1-x Gex)2 (for x=0, 0.1, 0.2, 0.3, 0.6, 0.8, 0.9, 1)
by: Ping, Shi-Wei, et al.
Published: (1998)

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si<sub>0.6</sub>Ge<sub>0.4</sub>/Si Heterojunction
by: Tao Han, et al.
Published: (2019-06-01)

A Novel Composite Material Designed from FeSi Powder and Mn0.8Zn0.2Fe2O4 Ferrite
by: Magdalena Streckova, et al.
Published: (2015-01-01)

Structural Investigation of Si-Ge Epitaxial Layers by Convergent Beam Electron Diffraction (CBED)
by: Yi-Yen Chen, et al.
Published: (2014)

Investigations on Al0.2Ga0.8As/In0.2Ga0.8As δ-pHEMT with a Transparent AZO Gate
by: Bo-Yi Chou, et al.
Published: (2009)

Compressively-strained, buried-channel $Si_{0.7}$Ge$_{0.3}$ p-MOSFETs fabricated on SiGe virtual substrates using a 0.25 µm CMOS process
by: Temple, Matthew P., et al.
Published: (2004)

Effects of surface tunneling in Si/SiGe and Ge/GeSi heterostructures
by: Yi-Hsin Su, et al.
Published: (2017)

Design and Investigation of the Junction-Less TFET with Ge/Si<sub>0.3</sub>Ge<sub>0.7</sub>/Si Heterojunction and Heterogeneous Gate Dielectric
by: Tao Han, et al.
Published: (2019-04-01)

Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices
by: M. Hijazi, et al.
Published: (2016-06-01)

Estudo da produção e evolução de pinholes em filmes finos de a-Ge0.9Si0.1:H e a-Ge0.9Si0.1
by: Champi Farfan, Ana Melva
Published: (2001)

Effect of La0.8Sr0.2Co0.2Fe0.8O3−δ morphology on the performance of composite cathodes
by: Erqing Zhao, et al.
Published: (2014-02-01)

Material quality issues in Si and SiGe molecular beam epitaxy
by: Smith, David Warren
Published: (1993)

Magnetic Susceptibility of Si0,97Ge0,03 Filamentous Crystals Irradiated by Protons
by: Yu. Pavlovskyy, et al.
Published: (2019-07-01)

Suppressing the Boron Penetration on Poly-Si/Poly-Si0.82Ge0.18 Gated Structure by In-Situ Boron Activation Process
by: Wan-Wen Tseng, et al.
Published: (2006)