Probing Interfacial Strains in Si/Si0.8Ge0.2/Si Using Three-Beam Bragg-Surface Diffraction
碩士 === 國立清華大學 === 物理系 === 104 === The semiconductor devices are composed of thin-film systems, therefore, the strain is one of the important factors to the performance of the device. We probe interfacial strains in Si/Si0.8Ge0.2/Si using three-beam Bragg-surface diffraction. The experiment was perfo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67929895804984717607 |