Probing Interfacial Strains in Si/Si0.8Ge0.2/Si Using Three-Beam Bragg-Surface Diffraction
碩士 === 國立清華大學 === 物理系 === 104 === The semiconductor devices are composed of thin-film systems, therefore, the strain is one of the important factors to the performance of the device. We probe interfacial strains in Si/Si0.8Ge0.2/Si using three-beam Bragg-surface diffraction. The experiment was perfo...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67929895804984717607 |
| Summary: | 碩士 === 國立清華大學 === 物理系 === 104 === The semiconductor devices are composed of thin-film systems, therefore, the strain is one of the important factors to the performance of the device. We probe interfacial strains in Si/Si0.8Ge0.2/Si using three-beam Bragg-surface diffraction.
The experiment was performed on BL17B1 beamline at the National Synchrotron Radiation Research Center (NSRRC).The Bragg-surface diffraction consists of a symmetric Bragg diffraction and a surface diffraction, propagating along the interface of the sample. The incident X-rays are 12keV and excite the substrate and thin film simultaneously. The interfacial strains are analyzed according to the spatial intensity distributions.
The sample is a silicon and silicon-germanium thin films grown on the silicon substrate(Si/Si0.8Ge0.2/Si).Three reflecting surfaces,(0 0 4)/(2 0 2)、(0 0 4)/(0 2 2)、(0 0 4)/(-2 0 2), are measured in this study. We find that the silicon-germanium is a triclinic structure and the silicon is nearly a orthorhombic structure. The thin film is deformed to accommodate the lattice mismatches so that the a and b-axis are shortened and the c-axis is stretched.
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