Depth profiles with sub-picometer resolution of the interfacial strains of Si0.7Ge0.3/Si using three-beam Bragg-surface diffraction
博士 === 國立清華大學 === 物理系 === 104 === For nano-semiconductor devices, how to enhance the device performance is one of the main goals of the semiconductor industries. As many devices are composed of thin-film systems in nano-scale, the carrier mobility would be directly governed by the strain of the thin...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48080323156946303299 |