Formation of nano silicon channel with thin silicon-rich silicon oxide
碩士 === 國立清華大學 === 材料科學工程學系 === 104 === PECVD is used to deposit silicon-rich silicon dioxide thin film. After annealing process, it turns out to be silicon dioxide thin film containing nano-silicon channel. The experiment shows that silicon content increases when silane ratio was raised during depos...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02847038318764954812 |
| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 104 === PECVD is used to deposit silicon-rich silicon dioxide thin film. After annealing process, it turns out to be silicon dioxide thin film containing nano-silicon channel. The experiment shows that silicon content increases when silane ratio was raised during deposited process. The average grain size of crystalline silicon is 5 nm. Nucleation phenomenon is observed inside the ultrathin silicon-rich silicon dioxide film and the interface. Furthermore, silicon nano channels through thin silicon-rich silicon dioxide are formed with sufficient anneal.
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