A study on conduction current mechanism investigation and reliability improvement induced by supercritical fluid treatment in Hafnium oxide-based Resistive random-access memory

• Main Authors: Yi-Chung Huang, 黃一中
• Other Authors: Jung-Hui Chen
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/17542388235874369352

碩士 === 國立高雄師範大學 === 化學系 === 104 === In order to understand the unstable configuration that occurs when measuring Pt / HfO2 / TiN device, in this experiment use the water-gas treatment on Pt / HfO2 / TiN device, and with conduction mechanisms and materials analysis, plus the member has bipolar operation characteristics, to establish a model of a hydrogen ion, and the first use of C-V frequency measurement technology; confirm the capacitance value of the water-gas treatment scale value when the difference between high and low frequency measurements, and thus verify changes in the element hydrogen ions caused. In previous laboratory studies, we can see that nitrogen for oxygen ions have a good stable results, so combining low temperatur supercritical technology combining , low temperature for HfOx device do combining with supercritical ammoniated, and by measuring the difference between the degree of reliability, explained by the model,that after the low temperatur supercritical ammoniated change the electrical conduction mechanism with Naicao element. Finally, research Pt / HfO2 / TiN device in the process of continuous operation after the deterioration, with analyzing the electrical conduction mechanism is due to the change in the number of oxygen ions during operation can be controlled, resulting in wire resistance caused by diverging retreat becomes difficult leading to deterioration by reliability and Naicao metric, use measurements to understand the operating times and temperatures for the deterioration of relations, and Pt / HfO2 / TiN device after low temperature supercritical ammoniated, change the properties of its.