A study on conduction current mechanism investigation and reliability improvement induced by supercritical fluid treatment in Hafnium oxide-based Resistive random-access memory
碩士 === 國立高雄師範大學 === 化學系 === 104 === In order to understand the unstable configuration that occurs when measuring Pt / HfO2 / TiN device, in this experiment use the water-gas treatment on Pt / HfO2 / TiN device, and with conduction mechanisms and materials analysis, plus the member has bipolar operat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17542388235874369352 |