Improved Off-state Current of GaAsSb/InGaAs Tunnel Field Effect Transistors
碩士 === 國立中央大學 === 電機工程學系 === 104 === Tunnel field effect transistors (TFETs) are based on band-to-band tunneling (BTBT) to generate the current. Therefore subthreshold swing (S.S.) can be less than 60 mV/decade while operating at room temperature. Unlike traditional metal oxide semiconductor field e...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50542701191745554920 |