Silicon/Germanium Heterojunction Avalanche Photodetector by Rapid-Melting-Growth Technique

• Main Authors: Chin-hsien Chou, 周晉賢
• Other Authors: Cheng-Lun Hsin
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/87303769503810998824

碩士 === 國立中央大學 === 電機工程學系 === 104 === Recently, silicon(Si)-based electronics integrated with germanium(Ge) are widely adopted due to the fact that Ge has a narrow band gap as absorption material for infrared wavelength and CMOS-compatible process, while Si has a favorable ionization coefficient ratio as avalanche multiplication material. However, it’s difficult to grow Ge on Si because of the large lattice mismatch (4.2%) between Si and Ge.Generally, epitaxial growth of Ge on Si relies on ultra-high vacuum chemical vapor deposition, which was expensive and time-consuming. In this report, we used rapid-melting-growth method to grown high-quality Ge on SOI (silicon-on-insulator), and then we can obtain a high-quality Ge absorption layer. Defect analysis was conducted by TEM, SEM and Raman Spectrometer.Furthermore, the SACM Ge/Si avalanche photodetector by rapid-melting-growth was fabricated and measured I-V characteristics of the fabricated device were studied.