Silicon/Germanium Heterojunction Avalanche Photodetector by Rapid-Melting-Growth Technique
碩士 === 國立中央大學 === 電機工程學系 === 104 === Recently, silicon(Si)-based electronics integrated with germanium(Ge) are widely adopted due to the fact that Ge has a narrow band gap as absorption material for infrared wavelength and CMOS-compatible process, while Si has a favorable ionization coefficient rati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87303769503810998824 |