Lateral-Configured Ge-Ge-Si PIN Photodetector on Silicon-on-Insulator substrate by Rapid-Melting-Growth Technique
碩士 === 國立中央大學 === 電機工程學系 === 104 === High-speed communication devices have been developed for many years for the synergy of photonic and electronic signal transmission. Because of the narrow bandgap for infrared light absorption of germanium and its strain-engineered band gap modulation, the incorpo...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/24293343303315252540 |