Investigation of flow patterns with high temperature substrate in a chemical vapor deposition reactor

• Main Authors: Peng, GUAN-JHONG, 彭冠中
• Other Authors: Liu, Yao-Hsien
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/yz6j8y

碩士 === 國立交通大學 === 機械工程系所 === 104 === Chemical vapor deposition (CVD) is widely used for manufacturing semiconductor materials and thin-films. The flow field influences the uniformity in the deposition process. The study build a test chamber for gas flow visualization experiments. The investigated parameters, include the showerhead-to-disk temperature difference (0-500°C), disk rotational speeds (0-500rpm), and showerhead-to-disk height (20-40mm). The result shows that buoyancy-induced recirculation can be suppressed by disk rotation. When disk rotational speeds increase, vortexes form near the chamber wall and on the disk simultaneously. When showerhead-to-disk height reduces, buoyancy-induced flow and rotation-induced flow are suppressed. When showerhead-to-disk temperature increases, viscous force also increases. Therefore, the effect of rotation decrease.