Characterization of Multi-level Ni/SiO2/TiO2/TaN Resistive RAM
碩士 === 國立交通大學 === 電機資訊國際學程 === 104 === The field of computing is facing gradual changes from just computing, towards “memorizing” and “searching” and this requires huge amounts of data storage. NAND Flash has been the key driver of non-volatile memory supplying all such demands. However, the charge...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wnaw53 |