Process-Dependence Analysis and Electrical Characteristic Modeling of High-k Metal Gate Bulk FinFET Devices
博士 === 國立交通大學 === 電信工程研究所 === 104 === There is no doubt that FinFET is a milestone in the semiconductor industry for the sub-22-nm technological nodes. Even though 16-nm HKMG (high-metal gate) bulk FinFET has achieved massive production, process optimizations are still emergency to improve yield...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90236265383685721695 |