Characteristic Simulation of Next-Generation InGaAs Multiple-Gate MOSFET Devices
碩士 === 國立交通大學 === 電信工程研究所 === 104 === The semiconductor industry has developed fast for the past decades. To maintain the advancement of Moore’s law, innovations of fabrication process, device structures with vertical channel, and high-mobility materials play the significant roles on the complementar...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53725871392149093197 |