A comprehensive study on novel stress memorization technique for nMOSFETs with Technology CAD

碩士 === 國立交通大學 === 電子物理系所 === 104 === In this thesis, we focus on a novel stress memorization technique – “Stress Proximity Free Technique”, which is used to enhance MOSFETs performance, and analyze the electrical characteristics with comprehensive study from fundamental principle to advanced semicon...

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Bibliographic Details
Main Authors: Li, Pei-Yan, 李沛諺
Other Authors: Chao, Tien-Sheng
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/68411549092737966069