The Study of AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors with Oxygen Neutral Beam Plasma Treatment
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === The disadvantages of conventional thin film transistor are high operation voltage, high threshold voltage, poor subthreshold swing, and lower field-effect mobility. These indicate that the traditional thin film transistor does not satisfy with the high perf...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x4w6p5 |