Growth of Ge single crystal stripes on Si substrate using rapid-melting growth

• Main Authors: Lin,Shih-Hong, 林士弘
• Other Authors: Lee,Chien-Ping
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/22709842886804588157

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === It’s known that High-quality Ge stripes on insulator were grown by rapid-melting growth (RMG), or by liquid-phase epitaxy (LPE) on Si substrates. In this thesis, we have used a method to make GOI based on Si substrates and a defect necking technique in which defects are confined to a short distance and high -quality Ge stripes exist in a long distance. Self-aligned microcrucibles were used to hold the Ge liquid and control the growth direction of Ge stripes. Several types of analysis methods have been used to measure the property of Ge stripes grown on Si substrate using rapid-melting growth. Further all my attempts to obtain measurement of their electric property were futile, because the linewidth of Ge stripes are too small to be measured. Finally, results of Raman and Electron Back-Scattered Diffraction (EBSD) showed that (100)-oriented single crystal Ge stripes exist in about 70um-102um away from the seed window and 30%-50% (111)-oriented single crystal Ge stripes exist in about 294um-327um away from the seed window due to RTA for 3seconds which is different from others.