Growth of Ge single crystal stripes on Si substrate using rapid-melting growth
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === It’s known that High-quality Ge stripes on insulator were grown by rapid-melting growth (RMG), or by liquid-phase epitaxy (LPE) on Si substrates. In this thesis, we have used a method to make GOI based on Si substrates and a defect necking technique in whic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22709842886804588157 |