Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5hyvp7 |