SiC Backside Via Process for GaN RF Power Device Application
碩士 === 國立交通大學 === 照明與能源光電研究所 === 104 === As a promising material, GaN attracts a lot of research attentions in semiconductor industry. Its excellent properties, such as wide bandgap, high electron mobility, high saturation velocity and high maximum operating temperature make it the most attractive m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3ca43s |