Simulation Study of Threshold Voltage of Normally Off AlGaN/GaN MOS-HEMTs
碩士 === 國立交通大學 === 照明與能源光電研究所 === 104 === AlGaN/GaN high electron mobility transistor (HEMT) is extensive investigation in recent years, because of their superior material properties that suitable for high frequency and high power applications. However, the conventional structure of AlGaN/GaN HEMT wh...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31665531934461804224 |