Epitaxial Growth of AlN buffer layer by Metal-Organic Chemical Vapor Deposition for AlGa(In)N/GaN High Electron Mobility Transistor Applications
博士 === 國立交通大學 === 材料科學與工程學系所 === 104 === The AlGa(In)N/GaN heterostructure for the high electron mobility transistor applications were grown on sapphire substrate with AlN buffer layer by metal-organic vapor deposition (MOCVD). The AlN buffer was consisted of low-temperature and high-temperature gro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14345511250593465012 |