Flip-Chip Packaging Design for Performance Enhancement of AlGaN/GaN High-Electron-Mobility Transistors
博士 === 國立交通大學 === 材料科學與工程學系所 === 104 === GaN-based high-electron mobility transistors (HEMTs) are recognized as one of the promising candidates for applications in power electronics since they are capable of operating at high voltages and high temperatures and delivering high output currents. Hence,...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/33662m |