Study of thin film GaN light emitting diodes bonded on Silicon substrate
碩士 === 國立交通大學 === 光電工程研究所 === 104 === Using silicon as substrate for GaN film growth has various advantage, such as low cost, large scale availability, good thermal and electrical conductivity. However, there are still some problems in the development of GaN on silicon. First, the large mismatch in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51029599224700738513 |