Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition
碩士 === 國立交通大學 === 光電系統研究所 === 104 === In recent years, due to scaling down of the semiconductor manufacturing process, traditional MOSFET will meet the problem of gate leakage current. In order to solve this problem, it is needed to introduce new materials and new device structures. Antimonide based...
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ndltd-TW-104NCTU51230052019-05-15T22:34:02Z http://ndltd.ncl.edu.tw/handle/gc8feq Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition 利用有機金屬化學氣相沉積法探討使用鎵/銻介面處理對於成長銻化鎵薄膜於砷化鎵基板之影響 Liu, Chun-Kuan 劉俊寬 碩士 國立交通大學 光電系統研究所 104 In recent years, due to scaling down of the semiconductor manufacturing process, traditional MOSFET will meet the problem of gate leakage current. In order to solve this problem, it is needed to introduce new materials and new device structures. Antimonide based tunneling FET may be one of the solution in the future. However, lattice mismatch between antimonide and commercial GaAs wafer is too large, it is very important to overcome the strain and defects that produced due to lattice mismatch. In this study, direct growth of GaSb on GaAs substrate has been investigated. Effects of GaSb/GaAs interfacial treatment parameters on the GaSb initial growth mode has been discussed in this work. By modulating TMGa flux and flow time, TMSb flux and flow time, we got the information of the vertical/lateral growth ratio of GaSb island. We discovered that when we use TMSb as interfacial treatment, it effectively lowers the surface free energy and promotes lateral growth mode of GaSb growth. By optimizing TMSb interfacial treatment, we can get 75 nm high quality GaSb thin film with surface roughness 1.7 nm and FWHM of XRD rocking curve is 371 arcsec. 張翼 馬哲申 2015 學位論文 ; thesis 51 en_US |
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碩士 === 國立交通大學 === 光電系統研究所 === 104 === In recent years, due to scaling down of the semiconductor manufacturing process, traditional MOSFET will meet the problem of gate leakage current. In order to solve this problem, it is needed to introduce new materials and new device structures. Antimonide based tunneling FET may be one of the solution in the future. However, lattice mismatch between antimonide and commercial GaAs wafer is too large, it is very important to overcome the strain and defects that produced due to lattice mismatch.
In this study, direct growth of GaSb on GaAs substrate has been investigated. Effects of GaSb/GaAs interfacial treatment parameters on the GaSb initial growth mode has been discussed in this work. By modulating TMGa flux and flow time, TMSb flux and flow time, we got the information of the vertical/lateral growth ratio of GaSb island. We discovered that when we use TMSb as interfacial treatment, it effectively lowers the surface free energy and promotes lateral growth mode of GaSb growth. By optimizing TMSb interfacial treatment, we can get 75 nm high quality GaSb thin film with surface roughness 1.7 nm and FWHM of XRD rocking curve is 371 arcsec.
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author2 |
張翼 |
author_facet |
張翼 Liu, Chun-Kuan 劉俊寬 |
author |
Liu, Chun-Kuan 劉俊寬 |
spellingShingle |
Liu, Chun-Kuan 劉俊寬 Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
author_sort |
Liu, Chun-Kuan |
title |
Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
title_short |
Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
title_full |
Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
title_fullStr |
Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
title_full_unstemmed |
Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition |
title_sort |
effect of the ga/sb treatment on the growth of gasb epitaxy on gaas substrate using metalorganic chemical vapor deposition |
publishDate |
2015 |
url |
http://ndltd.ncl.edu.tw/handle/gc8feq |
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