Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition
碩士 === 國立交通大學 === 光電系統研究所 === 104 === In recent years, due to scaling down of the semiconductor manufacturing process, traditional MOSFET will meet the problem of gate leakage current. In order to solve this problem, it is needed to introduce new materials and new device structures. Antimonide based...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/gc8feq |