Graphene Synthesis by Copper Thin Film and the Study on Electrical and Diffusion Barrier Properties in Graphene-Coated Copper Nanowires for Interconnects

• Main Authors: Da-JiunWang, 王大鈞
• Other Authors: Jen-Fin Lin
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/85906280814906208761

碩士 === 國立成功大學 === 機械工程學系 === 104 === Copper nanowires are made by bi-layer liftoff process using e-beam lithography and e-beam evaporation. Graphene-coated copper nanowires are synthesized by the rapid thermal process with 900℃ growth temperature for 3 minute and control cooling rate until 750℃ . The raman spectrum show the G and 2D band, and the I _D / I _G is near 2. It represent that there is graphene with defects on the copper nanowires. The XPS spectrum show the sp2 bonded which represent the carbon-carbon bonded of graphene at binding energy 284.6 eV. With the direct current-voltage measurent, we find that graphene reduce the resistivity of copper nanowires about 21.5%, compared to the no graphene-coated sample. It represent graphene reduce the surface scattering of electrons at the copper nanowires surface. For the purpose of analyzing the barrier property, we deposite 350nm silicon oxide layer on the sample by HDPCVD, and anneal at 200, 350, 500℃ for two hours. Using leakage current and EDS line scan measurement to analyze the barrier property. We find that the graphene will fail to diffusion barrier until 350 to 500℃ .