| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furthermore, we utilized Al and spontaneously oxidized Al2O3 as the floating gate and the tunneling layer, respectively. The charge and discharge effects with different gate voltages were discussed by Vt shift. By combining the advantages of high-κ dielectric and floating gate structure, the device effectively reduced the operation voltage and showed good performance of nonvolatile memory characteristic, with a low operation voltage of ±10 V, a large memory window of 4.5 V, and a long retention time of 103 s. We also analyzed mechanism injection by gate current fitting to understand the carrier injection mechanism through the oxide.
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