Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furtherm...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20093055496102383956 |