MOSFET Prepared by Hot Wire Doping SOI Substrate and 3D Gas Sensor with TSV Technology
碩士 === 國立成功大學 === 微電子工程研究所 === 104 === As the MOSFET devices have been scaling down, short channel effects become serious problems for traditional bulk MOSFETs. As the result, alternative MOSFET structure has been proposed. Shallow doping profile is a solution. Shallow doping profiles in drain and s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25862078642695348599 |