The Performance Improvement on GaN-based Light-Emitting-Diodes in Epitaxial Quality and Efficiency of Device
博士 === 國立成功大學 === 微電子工程研究所 === 104 === In this dissertation, the nitride based epitaxy material was grown by metalorganic chemical vapor deposition (MOCVD). Improvements of quality, efficiency, brightness and electrostatic discharge (ESD) ability on InGaN/GaN LED devices have been investigated. Fi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/63836617537926696710 |