Investigation of Cascaded GaN-based Optoelectronic Device with Tunnel Junction Layers Grown by MOCVD
博士 === 國立成功大學 === 微電子工程研究所 === 104 === In this dissertation, cascaded GaN-based optoelectronic devices with tunnel junction layers (TJLs) have been grown by metalorganic chemical vapor phase deposition (MOCVD) technique, and related characterizations including optical and electrical properties were...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/294zy8 |