Growth of Core-Shell n-type/p-type Gallium Nitride Nanorods by PECVD for Light-Emitting Diode Applications
碩士 === 國立成功大學 === 化學工程學系 === 104 === Owing to the significant optoelectronic property, GaN is used for light emitting diodes, laser diodes, sensors and high mobility transistor. Since 1-D nano-structure has the advantage of high aspect ratio and high specific surface area which help releases the...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39487649448409518302 |