Growth of Core-Shell n-type/p-type Gallium Nitride Nanorods by PECVD for Light-Emitting Diode Applications

碩士 === 國立成功大學 === 化學工程學系 === 104 === Owing to the significant optoelectronic property, GaN is used for light emitting diodes, laser diodes, sensors and high mobility transistor. Since 1-D nano-structure has the advantage of high aspect ratio and high specific surface area which help releases the...

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Bibliographic Details
Main Authors: Shiang-ChiChang, 張香棨
Other Authors: Franklin Chau-Nan Hong
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/39487649448409518302