Investigation on the effects of SiNx current blocking layer and substrate temperature on the device performances of vertical structure GaN LED power chips
碩士 === 國立中興大學 === 物理學系所 === 104 === In this thesis, silicon nitride (SiNx) current blocking layer (CBL) was employed to enable current spreading underneath the n-electrode of a vertical structure GaN-based light-emitting diode (V-GaN LED). This technique prevents the direct downward current cond...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3tb33d |