Analysis and Investigation of Strain Engineering Utilized in 2D/3D Nano-scaled Germanium-based Metal Oxide Semiconductor Field Transistors Enabled by Column IV Semiconductor alloys
碩士 === 中原大學 === 機械工程研究所 === 104 === Currently, strain-engineering techniques are well established in Si-based metal–oxide semiconductor field-effect transistor (MOSFET)technology. To compensate for the drawback of device-size reduc-tion, germanium-substituted silicon is chosen as a channel material.G...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69394912930853497123 |