Bipolar and complementary resistive switching characteristics using Ir/SiO2/TiN structure

Bipolar and complementary resistive switching characteristics using Ir/SiO2/TiN structure

碩士 === 長庚大學 === 電子工程學系 === 104 === In this thesis, bipolar resistive switching (BRS) characteristics using W/SiO2/TiN and Ir/SiO2/TiN RRAM structure have been investigated. Complementary resistive switching (CRS) using Ir/SiO2/TiN single cell has also been demonstrated. Defective SiO2 switching mate...

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Bibliographic Details
Main Authors:	Po Lin Yu, 游柏林
Other Authors:	S. Maikap
Format:	Others
Language:	en_US
Published:	2016
Online Access:	http://ndltd.ncl.edu.tw/handle/6xz84h

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