Bipolar and complementary resistive switching characteristics using Ir/SiO2/TiN structure
碩士 === 長庚大學 === 電子工程學系 === 104 === In this thesis, bipolar resistive switching (BRS) characteristics using W/SiO2/TiN and Ir/SiO2/TiN RRAM structure have been investigated. Complementary resistive switching (CRS) using Ir/SiO2/TiN single cell has also been demonstrated. Defective SiO2 switching mate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6xz84h |