The Study of Fabrication of Hydrogenated P-I-N Solar Cell by RF Magnetron Sputtering

• Main Authors: Hao-Jui Liu, 劉澔叡
• Other Authors: Shih-Chih Chen
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/17717677668751300210

碩士 === 國立雲林科技大學 === 電子工程系 === 103 === In this study a (100) n-type single crystalline with 1-10 Ω-cm wafer was used as substrate. The amorphous silicon (a-Si) i-layer and p-layer were deposited on the substrate by the RF magnetron sputtering system in sequence. The post hydrogen plasma treatment was applied on the deposited a-Si layers with various RF powers and durations to obtain the optimized passivation process. 　　The turn on voltage of p-i-n diode treated with the post hydrogen plasma treatment with RF power 30W for 80 seconds was obtained about 0.81V that is higher than it of p-i-n diode treated for 90 seconds about 0.7V. However, the p-i-n diode treated with the post HP treatment with RF power 30W for 90 seconds shows the better reverse biased current density of 2.5510−5A/cm2 at -1 V and it smaller about one magnitude compared with that of treated with post HP treatment for 90 sec about 7.2510−4A/cm2. It shown the small trap density in the a-Si layers and a-Si/ Si-substrate interface resulted in small reversed current density for solar cell applications.