Layout Design and Characterization of RF Polycrystalline Silicon Thin Film Transistor
碩士 === 國立臺北科技大學 === 電子工程系研究所 === 103 === This thesis presents the RF characteristics of the poly-Si TFTs with high-hafnium dioxide (HfO2) gate dielectric annealed by low-temperature microwave annealing (MWA). The cutoff frequency (fT) and oscillation frequency (fmax) of poly-Si TFTs with different...
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| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/pa599x |