Investigation of the Optical and Electrical Properties of GaN-based Blue Light-Emitting Diodes by Modulating Quantum Well Thickness
碩士 === 南臺科技大學 === 電子工程系 === 103 === Optical and electrical properties of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) with various indium gallium nitride (InGaN) quantum well (QW) thicknesses were investigated. The InGaN well thickness of the LED I, II, and III were 1.5, 2.5, and 3....
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yvskjm |