Fabrication of GaN-based LED on Patterned-Si Substrates
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 103 === The large lattice mismatch between Si and GaN results in a high dislocation density in epitaxial GaN, which limits the performance of LED structures. Moreover, a tensile stress is introduced into the film upon cooling from growth temperature because of...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/u2th5q |