| Summary: | 碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === The metal–oxide resistive random access memory (RRAM) is a promising candidate for the next generation nonvolatile memory. The research and development of RRAM are of great interest to many researchers due to its low cost, low energy operation, fast operating speed, good retention, and simple device structure. In general, RRAM is fabricated with a metal-insulator-metal (MIM) structure, and good compatibility with the complementary metal-oxide-semiconductor (CMOS) technology. Because of the shrinkage in device dimension, the leakage current would occur at the grain-boundaries in a thin crystalline insulator layer during the operation, which would be detrimental to the performance of device. In order to minimize the leakage current, amorphous-based metal–oxide insulator layer was prepared in this study. We investigated the RS behavior in amorphous (HfCuAlTi)Ox multicomponent oxide (MCO) thin film. The MCO is selected for the RS property study mainly because of its amorphous nature.
In the present study, an amorphous (HfCuAlTi)Ox thin film was deposited between top and bottom Pt electrodes by radio frequency magnetron sputtering system without intentional substrate heating or post-annealing. Different oxygen contents in (HfCuAlTi)Ox thin film were introduced and their resistive switching (RS) characteristics were examined. They exhibit typical forming-free unipolar RS properties with low operating voltage of <1.7 V, good endurance (~300 switching cycles), high ON/OFF resistance ratios, stable retention (>10000 s) at room temperature and 85°C. The RS properties are considered to be dominated by the filamentary conduction due to the presence of defects (oxygen vacancies) in the amorphous (HfCuAlTi)Ox thin film. In this work, the Pt/(HfCuAlTi)Ox/Pt device shows excellent performances for the next generation non-volatile memory applications.
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