Forming free resistive switching characteristics of amorphous sub-10 nm (HfCuAlTi)Ox thin films for resistive random access memory (RRAM) application
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === The metal–oxide resistive random access memory (RRAM) is a promising candidate for the next generation nonvolatile memory. The research and development of RRAM are of great interest to many researchers due to its low cost, low energy operation, fast operating...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46046802085817152590 |