Surface texturing effect on InGaN p-i-n photodetectors

碩士 === 國立臺灣科技大學 === 電子工程系 === 103 === In this study, we used surface texturing technique to fabricate GaN-based p-i-n photodetectors (PDs) with a commercial epitaxial wafer grown on patterned sapphire substrate (PSS) which has an InGaN/GaN MQW active layer. Two types of surface texturing were perfor...

Full description

Bibliographic Details
Main Authors: Yi-Ting Huang, 黃義廷
Other Authors: Pinghui Sophia Yeh
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/97218326428106604673