Surface texturing effect on InGaN p-i-n photodetectors
碩士 === 國立臺灣科技大學 === 電子工程系 === 103 === In this study, we used surface texturing technique to fabricate GaN-based p-i-n photodetectors (PDs) with a commercial epitaxial wafer grown on patterned sapphire substrate (PSS) which has an InGaN/GaN MQW active layer. Two types of surface texturing were perfor...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/97218326428106604673 |