Simulation and Electrical Characteristics of FerroelectricNegative Capacitance Field Effect Transistors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === Transistor scaling down has been the principal factor in driving CMOSFET performance improvement for more than thirty years. As transistor scales down, reduction of dynamic switching power (fCVDD2) is required, in concern of power consumption and heat dissi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29154027385872477633 |